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Low Noise and High Dynamic Range Packaged GaAs FETs

[TRANSCOM] DESCRIPTION The TC2181 is a high performance field effect transistor housed in a ceramic micro-x package with TC1101 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 1

Low Noise and High Dynamic Range Packaged GaAs FETs

DESCRIPTION The TC2181 is a high performance field effect transistor housed in a ceramic micro-x package with TC1101 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 100 DC teste

Low Noise Ceramic Packaged PHEMT GaAs FETs

DESCRIPTION The TC2182 is a high performance field effect transistor housed in a ceramic micro-x package with TC1102 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 100 DC teste

Low Noise Ceramic Packaged PHEMT GaAs FETs

[TRANSCOM, INC.] DESCRIPTION The TC2182 is a high performance field effect transistor housed in a ceramic micro-x package with TC1102 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices

50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass

General Description The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4) CMOS upgrades for bipolar Low Drop-out Regulators (LDOs), such as the LP2980. Total supply current is typically 55 µA; 20 to 60 times lower than in bipolar regulators. Features • Low Supply Current: 80

150mA CMOS LDO w/ Shutdown and Vref Bypass

The TC2014, TC2015, and TC2185 are high accuracy (typically ±0.4%) CMOS upgrades for older (bipolar) low dropout regulators such as the LP2980. Total supply current is typically 55µA (20 to 60 times lower than in bipolar regulators). The devices’ key features include ultra low noise operation (p Extremely Low Supply Current (55 µA typical)\nVery Low Dropout Voltage: (140 mV typical @ 150 mA)\nHigh Output Voltage Accuracy (±0.4% typical)\nStandard or Custom Output Voltages\nPower-Saving Shutdown Mode\nReference Bypass Input for Ultra Low-Noise Operation\nFast Shutdown Response Time (60 µ;

50 mA, 100 mA, 150 mA CMOS LDOs

General Description The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4) CMOS upgrades for bipolar Low Drop-out Regulators (LDOs), such as the LP2980. Total supply current is typically 55 µA; 20 to 60 times lower than in bipolar regulators. Features • Low Supply Current: 80

50 mA, 100 mA, 150 mA CMOS LDOs

General Description The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4) CMOS upgrades for bipolar Low Drop-out Regulators (LDOs), such as the LP2980. Total supply current is typically 55 µA; 20 to 60 times lower than in bipolar regulators. Features • Low Supply Current: 80

50 mA, 100 mA, 150 mA CMOS LDOs

General Description The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4) CMOS upgrades for bipolar Low Drop-out Regulators (LDOs), such as the LP2980. Total supply current is typically 55 µA; 20 to 60 times lower than in bipolar regulators. Features • Low Supply Current: 80

50 mA, 100 mA, 150 mA CMOS LDOs

General Description The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4) CMOS upgrades for bipolar Low Drop-out Regulators (LDOs), such as the LP2980. Total supply current is typically 55 µA; 20 to 60 times lower than in bipolar regulators. Features • Low Supply Current: 80

50 mA, 100 mA, 150 mA CMOS LDOs

General Description The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4) CMOS upgrades for bipolar Low Drop-out Regulators (LDOs), such as the LP2980. Total supply current is typically 55 µA; 20 to 60 times lower than in bipolar regulators. Features • Low Supply Current: 80

50 mA, 100 mA, 150 mA CMOS LDOs

General Description The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4) CMOS upgrades for bipolar Low Drop-out Regulators (LDOs), such as the LP2980. Total supply current is typically 55 µA; 20 to 60 times lower than in bipolar regulators. Features • Low Supply Current: 80

50 mA, 100 mA, 150 mA CMOS LDOs

General Description The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4) CMOS upgrades for bipolar Low Drop-out Regulators (LDOs), such as the LP2980. Total supply current is typically 55 µA; 20 to 60 times lower than in bipolar regulators. Features • Low Supply Current: 80

50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass

General Description The TC2014, TC2015 and TC2185 are high-accuracy (typically ±0.4) CMOS upgrades for bipolar Low Drop-out Regulators (LDOs), such as the LP2980. Total supply current is typically 55 µA; 20 to 60 times lower than in bipolar regulators. Features • Low Supply Current: 80

50mA, 100mA, and 150mA CMOS LDOs with Shutdown and Error Output

General Description The TC2054, TC2055 and TC2186 are high accuracy (typically ±0.4) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ total supply current is typically 55 µA at full load (20 to 60 times lower than in bipola

Packaged FET

Packaged FET

50 mA, 100 mA, 150 mA CMOS LDOs with

文件：827.7 Kbytes Page：20 Pages

50 mA, 100 mA, 150 mA CMOS LDOs with

文件：827.7 Kbytes Page：20 Pages

50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass

文件：371.02 Kbytes Page：20 Pages

封装/外壳：SC-74A，SOT-753 包装：卷带（TR） 描述：IC REG LINEAR 1.8V 150MA SOT23-5 集成电路（IC） 线性 + 开关稳压器

50 mA, 100 mA, 150 mA CMOS LDOs with

文件：827.7 Kbytes Page：20 Pages

50 mA, 100 mA, 150 mA CMOS LDOs with

文件：827.7 Kbytes Page：20 Pages

50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass

文件：371.02 Kbytes Page：20 Pages

50 mA, 100 mA, 150 mA CMOS LDOs with

文件：827.7 Kbytes Page：20 Pages

50 mA, 100 mA, 150 mA CMOS LDOs with

文件：827.7 Kbytes Page：20 Pages

50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass

文件：371.02 Kbytes Page：20 Pages

50 mA, 100 mA, 150 mA CMOS LDOs with

文件：827.7 Kbytes Page：20 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：943.83 Kbytes Page：18 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

27W SWITCHING REGULATOR FOR AUTOMOTIVE APPLICATION

DESCRIPTION The GS-R218 is a switching voltage regulator that can deliver an output current of 1,5 A at 18 V when supplied by a car battery. The regulator uses a cigar lighter case with a coiled cord and it is protected against overloads and short circuits at the output (latching overload protec

Thyristors(Silicon Controlled Rectifiers)

. . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. • Glass-Passivated Junctions • Blocking Voltage to 800 Volts • TO-220 Construction —

Silicon PNP Transistor Audio Power Output

Description: The NTE218 is ideal for use as a driver, switch and medium–power amplifier applications. This device features: Features: • Low Saturation Voltage – 0.6VCE(sat) @ IC = 1A • High Gain Characteristics – hFE @ IC = 250mA: 30–100 • Excellent Safe Area Limits

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

Operational Amplifiers

文件：597.13 Kbytes Page：18 Pages