50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

General Description The TC1072 and TC1073 are high accuracy (typically ±0.5) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total s

100mA CMOS LDO w/ Shutdown, Error Output, and Vref Bypass

The TC1072 and TC1073 are high accuracy (typically ±0.5%) CMOS upgrade for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply current is ty Very Low Ground Current for Longer Battery Life!\nVery Low Dropout Voltage\nChoice of 50 mA and 100 mA Output (TC1072, TC1073, Respectively)\nHigh Output Voltage Accuracy\nStandard or Custom Output Voltages\nPower-Saving Shutdown Mode\nERROR Ouput can be Used as a Low Battery\nDetector, or Processor;

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：727.22 Kbytes Page：22 Pages

9.2 - 10.2 GHz 26 dBm MMIC

文件：73.03 Kbytes Page：3 Pages

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：658.94 Kbytes Page：22 Pages

丝印代码：F8**；Analog & Interface Product Selector Guide

General Description The TC1072 and TC1073 are high accuracy (typically ±0.5) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total s

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

General Description The TC1072 and TC1073 are high accuracy (typically ±0.5) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total s

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

General Description The TC1072 and TC1073 are high accuracy (typically ±0.5) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total s

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

General Description The TC1072 and TC1073 are high accuracy (typically ±0.5) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total s

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

General Description The TC1072 and TC1073 are high accuracy (typically ±0.5) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total s

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

General Description The TC1072 and TC1073 are high accuracy (typically ±0.5) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total s

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

General Description The TC1072 and TC1073 are high accuracy (typically ±0.5) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total s

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

General Description The TC1072 and TC1073 are high accuracy (typically ±0.5) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total s

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

General Description The TC1072 and TC1073 are high accuracy (typically ±0.5) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total s

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

General Description The TC1072 and TC1073 are high accuracy (typically ±0.5) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total s

封装/外壳：SOT-23-6 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG LINEAR 1.8V 100MA SOT23-6 集成电路（IC） 线性 + 开关稳压器

丝印代码：FY**；50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：658.94 Kbytes Page：22 Pages

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：727.22 Kbytes Page：22 Pages

封装/外壳：SOT-23-6 包装：卷带（TR） 描述：IC REG LINEAR 2.5V 100MA SOT23-6 集成电路（IC） 稳压器 - 线性

丝印代码：F1**；50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：658.94 Kbytes Page：22 Pages

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：727.22 Kbytes Page：22 Pages

丝印代码：FT**；50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：658.94 Kbytes Page：22 Pages

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：727.22 Kbytes Page：22 Pages

丝印代码：F2**；50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：658.94 Kbytes Page：22 Pages

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：727.22 Kbytes Page：22 Pages

丝印代码：F8**；50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：658.94 Kbytes Page：22 Pages

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：727.22 Kbytes Page：22 Pages

丝印代码：FZ**；50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：658.94 Kbytes Page：22 Pages

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：727.22 Kbytes Page：22 Pages

丝印代码：F3**；50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：658.94 Kbytes Page：22 Pages

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：727.22 Kbytes Page：22 Pages

丝印代码：F4**；50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：658.94 Kbytes Page：22 Pages

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：727.22 Kbytes Page：22 Pages

丝印代码：F9**；50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：658.94 Kbytes Page：22 Pages

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：727.22 Kbytes Page：22 Pages

丝印代码：F0**；50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：658.94 Kbytes Page：22 Pages

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：727.22 Kbytes Page：22 Pages

丝印代码：F6**；50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：658.94 Kbytes Page：22 Pages

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

文件：727.22 Kbytes Page：22 Pages

26- 34 GHz Medium Power Amplifier

The TriQuint TGA1073A-SCC is a three stage MPA MMIC design using TriQuint’s proven 0.25-µm mmW pHEMT 2MI process. The TGA1073A is designed to support a variety of millimeter wave applications including point-to-point digital radio and LMDS/LMCS. Key Features and Performance • 19 dB Nominal Gain

26- 34 GHz Medium Power Amplifier

The TriQuint TGA1073A-SCC is a three stage MPA MMIC design using TriQuint’s proven 0.25-µm mmW pHEMT 2MI process. The TGA1073A is designed to support a variety of millimeter wave applications including point-to-point digital radio and LMDS/LMCS. Key Features and Performance • 19 dB Nominal Gain

36 - 40 GHz Power Amplifier

The TriQuint TGA1073C-EPU is a two stage PA MMIC design using TriQuint’s proven 0.25 µm Power pHEMT process. The TGA1073C is designed to support a variety of millimeter wave applications including point-to-point digital radio and LMDS and other point-to-multipoint communications. Key Features and

36 - 40 GHz Power Amplifier

The TriQuint TGA1073C-EPU is a two stage PA MMIC design using TriQuint’s proven 0.25 µm Power pHEMT process. The TGA1073C is designed to support a variety of millimeter wave applications including point-to-point digital radio and LMDS and other point-to-multipoint communications. Key Features and

16-BIT BUS-TERMINATION ARRAY WITH BUS-HOLD FUNCTION

文件：228.8 Kbytes Page：9 Pages