50mA, 100mA and 150mA CMOS LDOs with Shutdown and ERROR Output

GENERAL DESCRIPTION The TC1054 is a high accuracy (typically ±0.5) CMOS upgrade for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the TC1054’s CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply cur

100mA High Accuracy CMOS LDO w/ Shutdown and Error Output

The TC1054, TC1055, and TC1186 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply cur Low Ground Current for Longer Battery Life\nVery Low Dropout Voltage\nMinimum 50mA, 100mA, and 150mA Output Current (TC1054, TC1055, and TC1186, Respectively)\nHigh Output Voltage Accuracy\nStandard or Custom Output Voltages\nPower-Saving Shutdown Mode\nERROR Output Can Be Used as a Low Battery Dete;

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：456.26 Kbytes Page：20 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：389.68 Kbytes Page：18 Pages

PFM/PWM Step-Down DC/DC Controller

General Description The TC105 is a step-down (Buck) switching controller that furnishes output currents of up to 1A (max) while delivering a typical efficiency of 92. The TC105 normally operates in pulse width modulation mode (PWM), but automatically switches to pulse frequency modulation (PFM)

50mA, 100mA and 150mA CMOS LDOs with Shutdown and ERROR Output

GENERAL DESCRIPTION The TC1054 is a high accuracy (typically ±0.5) CMOS upgrade for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the TC1054’s CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply cur

50mA, 100mA and 150mA CMOS LDOs with Shutdown and ERROR Output

GENERAL DESCRIPTION The TC1054 is a high accuracy (typically ±0.5) CMOS upgrade for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the TC1054’s CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply cur

50mA, 100mA and 150mA CMOS LDOs with Shutdown and ERROR Output

GENERAL DESCRIPTION The TC1054 is a high accuracy (typically ±0.5) CMOS upgrade for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the TC1054’s CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply cur

50mA, 100mA and 150mA CMOS LDOs with Shutdown and ERROR Output

GENERAL DESCRIPTION The TC1054 is a high accuracy (typically ±0.5) CMOS upgrade for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the TC1054’s CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply cur

50mA, 100mA and 150mA CMOS LDOs with Shutdown and ERROR Output

GENERAL DESCRIPTION The TC1054 is a high accuracy (typically ±0.5) CMOS upgrade for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the TC1054’s CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply cur

50mA, 100mA and 150mA CMOS LDOs with Shutdown and ERROR Output

GENERAL DESCRIPTION The TC1054 is a high accuracy (typically ±0.5) CMOS upgrade for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the TC1054’s CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply cur

50mA, 100mA and 150mA CMOS LDOs with Shutdown and ERROR Output

GENERAL DESCRIPTION The TC1054 is a high accuracy (typically ±0.5) CMOS upgrade for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the TC1054’s CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply cur

50mA, 100mA and 150mA CMOS LDOs with Shutdown and ERROR Output

GENERAL DESCRIPTION The TC1054 is a high accuracy (typically ±0.5) CMOS upgrade for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the TC1054’s CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply cur

50mA, 100mA and 150mA CMOS LDOs with Shutdown and ERROR Output

GENERAL DESCRIPTION The TC1054 is a high accuracy (typically ±0.5) CMOS upgrade for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the TC1054’s CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply cur

50mA, 100mA and 150mA CMOS LDOs with Shutdown and ERROR Output

GENERAL DESCRIPTION The TC1054 is a high accuracy (typically ±0.5) CMOS upgrade for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the TC1054’s CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply cur

PFM/PWM Step-Down DC/DC Controller

文件：197.66 Kbytes Page：14 Pages

封装/外壳：SC-74A，SOT-753 功能：降压 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG CTRLR BUCK SOT23A-5 集成电路（IC） PMIC - 稳压器 - DC DC 开关式控制器

封装/外壳：SC-74A，SOT-753 包装：卷带（TR） 描述：IC REG LINEAR 1.8V 100MA SOT23-5 集成电路（IC） 稳压器 - 线性

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：456.26 Kbytes Page：20 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：389.68 Kbytes Page：18 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：389.68 Kbytes Page：18 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：456.26 Kbytes Page：20 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：456.26 Kbytes Page：20 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：389.68 Kbytes Page：18 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：389.68 Kbytes Page：18 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：456.26 Kbytes Page：20 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：456.26 Kbytes Page：20 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：389.68 Kbytes Page：18 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：389.68 Kbytes Page：18 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：456.26 Kbytes Page：20 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：456.26 Kbytes Page：20 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：389.68 Kbytes Page：18 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：456.26 Kbytes Page：20 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：389.68 Kbytes Page：18 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：389.68 Kbytes Page：18 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：456.26 Kbytes Page：20 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：456.26 Kbytes Page：20 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：389.68 Kbytes Page：18 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：389.68 Kbytes Page：18 Pages

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output

文件：456.26 Kbytes Page：20 Pages

Integrated Circuit FM/AM IF Amp

Integrated Circuit FM/AM IF Amp

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

Ka Band 2 Watt Power Amplifier

Key Features and Performance • 0.25 um pHEMT Technology • 20 dB Nominal Gain • 2W Nominal Pout • -30 dBc IMR3 @ 26 dBm SCL • Bias 7V @ 1.4 A • Chip Dimensions 5.89 mm x 3.66 mm Primary Applications • LMDS • Point-to-Point Radio • Satellite Ground Terminal Rel

Ka Band 2 Watt Power Amplifier

Key Features and Performance • 0.25 um pHEMT Technology • 20 dB Nominal Gain • 2W Nominal Pout • -30 dBc IMR3 @ 26 dBm SCL • Bias 7V @ 1.4 A • Chip Dimensions 5.89 mm x 3.66 mm Primary Applications • LMDS • Point-to-Point Radio • Satellite Ground Terminal Rel

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO=120V * 3 Amp continuous Current * 6 Amp pulse Current * Very Low Saturation Voltage APPLICATIONS * Automotive Switching Circuit * Audio Driver Stages