二相步进电机驱动芯片

TC1002是一个高性能细分步进马达驱动控制芯片，采用LQFP44封装，具有14种细分等级，内部集成SIN/COS发生器和DAC，具有过流、过温保护和电流快衰慢衰功能。可随时改变马达状态，输入时钟和方向两种信号即可控制马达，可在离散状态下工作。完整的数字控制集成在一颗IC中，高集成度减少产品的设计周期尽量减少了外部部分分立元件.提供一个給设计者一个简单又高效的产品。 1.它包含一个16位 SIN/COS信号发生器。\r\n\r\n2.超多细分设置：14种细分（2-256细分、5-250细分）。\r\n\r\n3.多种保护措施：过温保护、过流保护、过压保护。\r\n\r\n4.绿色节能设计：自动半流功能。\r\n\r\n5. 5V电源供电\r\n\r\n6. 封装LQPF44;

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp