SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS. FEATURES : . Low Noise : 4dB Max. (TBC549) 3dB Max. (TBC550) . High VCE o : 30V (TBC549) 45V (TBC550) . High hpE : 200 ~800

Ultralow Input Bias Current Operational Amplifier

FEATURES Ultralow input bias current 60 fA maximum (AD549L) 100 fA maximum (AD549K) 250 fA maximum (AD549J) Input bias current guaranteed over the common-mode voltage range Low offset voltage 0.50 mV maximum (AD549K) 1.00 mV maximum (AD549J) Low offset drift 15 μV/°C maximum (AD549K) 20 μ

Ultralow Input Bias Current Operational Amplifier

GENERAL DESCRIPTION The AD5491 is a monolithic electrometer operational amplifier with very low input bias current. Input offset voltage and input offset voltage drift are laser trimmed for precision performance. The ultralow input current of the part is achieved with Topgate™ JFET technology, a

Ultralow Input Bias Current Operational Amplifier

GENERAL DESCRIPTION The AD5491 is a monolithic electrometer operational amplifier with very low input bias current. Input offset voltage and input offset voltage drift are laser trimmed for precision performance. The ultralow input current of the part is achieved with Topgate™ JFET technology, a

Ultralow Input Bias Current Operational Amplifier

文件：1.22293 Mbytes Page：19 Pages

Ultralow Input Bias Current Operational Amplifier

文件：1.22613 Mbytes Page：20 Pages