Switching and Amplifier

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

Low Noise Transistors NPN Silicon

Low Noise Transistors NPN Silicon Features • These are Pb−Free Devices*

NPN general purpose transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in audio frequency equipment.

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Low Noise Transistors TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with T

Si-Epitaxial PlanarTransistors

Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Mechanical Data 1) (1) Taped in ammo pack 4000 (Raster 2.54) (2) On request: in bulk 5000 (Ra

Low Noise Transistors

Low Noise Transistors NPN Silicon

General Purpose Transistor

Features: • NPN silicon planar epitaxial transistors • General purpose transistors, best suited for use in driver stages of audio amplifiers, of tape recorders. Low noise input stages, Hi-Fi amplifiers, signal processing circuits of television receivers Description Transistor, NPN, TO-92

NPN general purpose transistors

NPN Silicon Transistors

NPN Silicon Transistors

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 30V 0.1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

General Purpose NPN Transistors

文件：148.07 Kbytes Page：2 Pages

Low Noise Transistors NPN Silicon

文件：57.02 Kbytes Page：4 Pages

Bipolar Transistors

Low Noise Transistors NPN Silicon

Low Noise Transistors NPN Silicon Features • These are Pb−Free Devices*

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560

Switching and Applications

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

Switching and Amplifier

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 30V 0.1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Transistors

Ultralow Input Bias Current Operational Amplifier

FEATURES Ultralow input bias current 60 fA maximum (AD549L) 100 fA maximum (AD549K) 250 fA maximum (AD549J) Input bias current guaranteed over the common-mode voltage range Low offset voltage 0.50 mV maximum (AD549K) 1.00 mV maximum (AD549J) Low offset drift 15 μV/°C maximum (AD549K) 20 μ

Ultralow Input Bias Current Operational Amplifier

GENERAL DESCRIPTION The AD5491 is a monolithic electrometer operational amplifier with very low input bias current. Input offset voltage and input offset voltage drift are laser trimmed for precision performance. The ultralow input current of the part is achieved with Topgate™ JFET technology, a

Ultralow Input Bias Current Operational Amplifier

GENERAL DESCRIPTION The AD5491 is a monolithic electrometer operational amplifier with very low input bias current. Input offset voltage and input offset voltage drift are laser trimmed for precision performance. The ultralow input current of the part is achieved with Topgate™ JFET technology, a

Ultralow Input Bias Current Operational Amplifier

文件：1.22293 Mbytes Page：19 Pages

Ultralow Input Bias Current Operational Amplifier

文件：1.22613 Mbytes Page：20 Pages