SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. NPN COMPLEMENTS ARE TBC337 AND TBC338. FEATURES . High VCEO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VCE(sat)=-0.7V (Max.) at Ic=-500mA

Socket terminal strip Screw connection, with raised base

The socket terminal strip 327-FU with raised base and a pitch of 14,5 mm is available in 1 to 12 pole design. The raised base extends the creepage distance to the ground which allows 600 V in accordance with UL and CSA regulations without an additional insulating base. One fixing hole is locat

Jumper Accessories

The jumper 327-J electrically bridges adjacent poles of series 326 and 327 terminals. It is available in 14 mm pitch with 2 to 12 poles. Just like the lead, it is connected to the clamping units. The jumper shell is insulated.

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ327 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance RDS(on) = 0.13 Ω TYP. (VGS = −10 V, ID = −2.0 A) RDS(on) = 0.21 Ω TYP. (VGS = −4 V, ID = −1.6 A) • Low Cis

Socket terminal strip Screw connection

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Crystal Clock Oscillators

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