位置:首页 > IC中文资料第12487页 > TB9414VA
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TB9414VA | Specification of GaAlAs IR Emitting Diode Chip DESCRIPTION TB9414VA is an infrared, 940 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed. Anode is the bond pad on top. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed con | VishayVishay Siliconix 威世威世科技公司 | ||
TB9414VA | Specification of GaAlAs IR Emitting Diode Chip DESCRIPTION TB9414VA is an infrared, 940 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed. Anode is the bond pad on top. FEATURES • Package type: chip • Package form: single chip • Technology: double hetero • Dimensions chip (L x W x H in mm): | VishayVishay Siliconix 威世威世科技公司 | ||
TB9414VA | Specification of GaAlAs IR Emitting Diode Chip | VishayVishay Siliconix 威世威世科技公司 | ||
TB9414VA | Specification of GaAlAs IR Emitting Diode Chip 文件:84.85 Kbytes Page:4 Pages | VishayVishay Siliconix 威世威世科技公司 | ||
TB9414VA | Specification of GaAlAs IR Emitting Diode Chip 文件:87.81 Kbytes Page:4 Pages | VishayVishay Siliconix 威世威世科技公司 | ||
Specification of GaAlAs IR Emitting Diode Chip DESCRIPTION TB9414VA is an infrared, 940 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed. Anode is the bond pad on top. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed con | VishayVishay Siliconix 威世威世科技公司 | |||
Specification of GaAlAs IR Emitting Diode Chip DESCRIPTION TB9414VA is an infrared, 940 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed. Anode is the bond pad on top. FEATURES • Package type: chip • Package form: single chip • Technology: double hetero • Dimensions chip (L x W x H in mm): | VishayVishay Siliconix 威世威世科技公司 | |||
Specification of GaAlAs IR Emitting Diode Chip DESCRIPTION TB9414VA is an infrared, 940 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed. Anode is the bond pad on top. FEATURES • Package type: chip • Package form: single chip • Technology: double hetero • Dimensions chip (L x W x H in mm): | VishayVishay Siliconix 威世威世科技公司 | |||
Specification of GaAlAs IR Emitting Diode Chip DESCRIPTION TB9414VA is an infrared, 940 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed. Anode is the bond pad on top. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed con | VishayVishay Siliconix 威世威世科技公司 | |||
Specification of GaAlAs IR Emitting Diode Chip 文件:87.81 Kbytes Page:4 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Specification of GaAlAs IR Emitting Diode Chip 文件:87.81 Kbytes Page:4 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Specification of GaAlAs IR Emitting Diode Chip 文件:84.85 Kbytes Page:4 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
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TB9414VA产品属性
- 类型
描述
- 型号
TB9414VA
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Specification of GaAlAs IR Emitting Diode Chip
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
原厂 |
原厂封装 |
1237 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
MINI |
22+ |
NA |
5000 |
只做原装,价格优惠,长期供货。 |
|||
TOS |
24+ |
300 |
真实现货库存 |
||||
VISHAY/威世 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
OSRAM/欧司朗 |
24+ |
LED |
60000 |
全新原装现货 |
|||
VISHAY/威世 |
23+ |
SMD |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
Mini-circuits |
1000 |
||||||
MINI |
20+ |
200 |
MINI代理分销 常备现货! |
TB9414VA规格书下载地址
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