Specification of GaAlAs IR Emitting Diode Chip

DESCRIPTION TB9408VA is an infrared, 940 nm emitting diode in GaAlAs multi quantum well technology with high radiant power and high speed. Anode is the bond pad on top. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assume

Specification of GaAlAs IR Emitting Diode Chip

DESCRIPTION TB9408VA is an infrared, 940 nm emitting diode in GaAlAs multi quantum well technology with high radiant power and high speed. Anode is the bond pad on top. FEATURES • Package type: chip • Package form: single chip • Technology: multi quantum well (MQW) • Dimensions chip (L x

Specification of GaAlAs IR Emitting Diode Chip

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High Perform Instr, 1 Pr #20 Str TC, PVC Ins E2, PVC Jkt, PLTC

Product Description High Performance Instrumentation, 1 Pair 20AWG (19x32) Tinned Copper, PVC Insulation E2 Color Code, PVC Outer Jacket, PLTC

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6-32 BINDING HEAD SCREW

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N-Channel MOSFET uses advanced trench technology

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