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TB1100H价格

参考价格:¥2.8252

型号:TB1100H-13-F 品牌:Diodes 备注:这里有TB1100H多少钱,2026年最近7天走势,今日出价,今日竞价,TB1100H批发/采购报价,TB1100H行情走势销售排行榜,TB1100H报价。
型号 功能描述 生产厂家 企业 LOGO 操作
TB1100H

100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

Features • 100A Peak Pulse Current @ 10/1000μs • 400A Peak Pulse Current @ 8/20μs • 58 - 320V Stand-Off Voltages • Oxide-Glass Passivated Junction • Bidirectional Protection In a Single Device • High Off-State Impedance and Low On-State Voltage • Helps Equipment Meet GR-1089-CORE, IEC 61000

DIODES

美台半导体

TB1100H

SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

FEATURES ● Oxide Glass Passivated Junction ● Bidirectional protection in a single device ● Surge capabilities up to 100A @ 10/1000us or 400 @ 8/20us ● High off state Impedance and low on state voltage ● Plastic material has UL flammability classification 94V-0

LITEON

光宝科技

TB1100H

THYRISTOR SURGE SUPPRESSORS

Features ● 100A Peak Pulse Current @ 10/1000μs ● 400A Peak Pulse Current @ 8/20μs ● 58 - 320V Stand-Off Voltages ● Oxide-Glass Passivated Junction ● Bi-Directional Protection In a Single Device ● High Off-State impedance and Low On-State Voltage

SUNMATE

森美特

TB1100H

thyristor

100A Peak Pulse Current @ 10/1000μs400A Peak Pulse Current @ 8/20μs58 - 320V Stand-Off VoltagesOxide-Glass Passivated JunctionBi-Directional Protection In a Single DeviceHigh Off-State impedance and Low On-State VoltageHelps Equipment Meet GR-1089-CORE, IEC 61000-4-5, FCC Part 68,\n ITU-T K.20/K.2;

DIODES

美台半导体

TB1100H

SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

文件:810.094 Kbytes Page:3 Pages

SUNMATE

森美特

PDF上传者:深圳冠荣电子有限公司

TB1100H

100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

文件:76.5 Kbytes Page:4 Pages

DIODES

美台半导体

TB1100H

100A BIDIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

文件:113.35 Kbytes Page:5 Pages

DIODES

美台半导体

TB1100H

防雷管

SUNMATE

森美特

100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

Features • 100A Peak Pulse Current @ 10/1000μs • 400A Peak Pulse Current @ 8/20μs • 58 - 320V Stand-Off Voltages • Oxide-Glass Passivated Junction • Bidirectional Protection In a Single Device • High Off-State Impedance and Low On-State Voltage • Helps Equipment Meet GR-1089-CORE, IEC 61000

DIODES

美台半导体

封装/外壳:DO-214AA,SMB 包装:散装 描述:THYRISTOR 90V 400A DO214AA 电路保护 TVS - 晶闸管

DIODES

美台半导体

封装/外壳:DO-214AA,SMB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:THYRISTOR 90V 400A DO214AA 电路保护 TVS - 晶闸管

DIODES

美台半导体

100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

文件:76.5 Kbytes Page:4 Pages

DIODES

美台半导体

晶闸管浪涌保护器 - Surface Mount TSPD

LITEON

光宝科技

Schottky Power Rectifier(Surface Mount Power Package)

Schottky Barrier Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit

MOTOROLA

摩托罗拉

ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS

SWITCHMODE Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • 20 mjoules Avalanche Energy Guaranteed • Excellent Prot

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

MOSPEC

统懋

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

TB1100H产品属性

  • 类型

    描述

  • Off-State Capacitance CO:

    120 pF

  • Rated Repetitive Off-State Voltage VDRM:

    90 V

  • Off-State Leakage Current @ VDRM:

    5 µA

  • On-State Voltage @ IT = 1A VT:

    3.5 V

  • Breakover Current IBO Min:

    50 mA

  • Breakover Current IBO Max:

    800 mA

  • Holding Current IH Min:

    150 mA

  • Holding Current IH Max:

    800 mA

  • Packages:

    SMB

更新时间:2026-8-2 11:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
26+
N/A
52000
一级代理-主营优势-实惠价格-不悔选择
DIODES/美台
2025+
SMB(DO-214AA)
5000
原装进口,免费送样品!
DIODES/美台
2019+PB
SMB(DO-214AA)
30000
原装正品 可含税交易
ON/DIODES/PANJIT
24+
SMB
43000
DIODES/美台
24+
N/A
500000
美台原厂超低价支持
DIODES
SMB(DO-214AA)
30000
一级代理 原装正品假一罚十价格优势长期供货
DIODES
08+
DO-214AA
85000
绝对全新原装强调只做全新原装现
DIODES/美台
20+
SMB(DO-214AA)
36800
原装优势主营型号-可开原型号增税票
DIODES/美台
23+
NA
6000
原装正品假一罚百!可开增票!
DIODES INCORPORATED
25+
N/A
6843
样件支持,可原厂排单订货!

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