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TA6晶体管资料
TA60别名：TA60三极管、TA60晶体管、TA60晶体三极管
TA60生产厂家：
TA60制作材料：Si-N+Darl
TA60性质：4*NPN-DARL_COMMON_EMITTER
TA60封装形式：直插封装
TA60极限工作电压：40V
TA60最大电流允许值：0.3A
TA60最大工作频率：<1MHZ或未知
TA60引脚数：10
TA60最大耗散功率：
TA60放大倍数：
TA60图片代号：I-18
TA60vtest：40
TA60htest：999900
- TA60atest：0.3
TA60wtest：0
TA60代换 TA60用什么型号代替：
TA6价格
参考价格：￥1.0842
型号：TA6F12AHM3/6A 品牌：Vishay 备注：这里有TA6多少钱，2025年最近7天走势，今日出价，今日竞价，TA6批发/采购报价，TA6行情走势销售排行榜，TA6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TA6 | Max. load 6,000N (push); 4,000N (pull) GeneralFeatures Max.load6,000N(push);4,000N(pull) Max.speedatmax.load5mm/s Max.speedatnoload43mm/s Retractedlength≥Stroke+163mm CertificateUL962,EMC Stroke25~1000mm OutputsignalsHallsensors OptionsFreewheelingpushonly,safetynut Voltage12/24/36VDC Col | TIMOTION TiMOTION Technology Co. Ltd. |  |   |
Epitaxial Planar Silicon Transistor Arrays ®Features 1)CompactpackagingenablesPC boardmountingonabareminimum ofspace. 2}Awiderangeofcircuitsareavail- ablefordesignflexibility. | ROHMRohm 罗姆罗姆半导体集团 |  | | |
SHOCK SENSOR IC (1ch VERSION) ShockSensorIC(1chversion) TA6009FN/FNGdetectsanexistenceofexternalshockthroughtheshocksensorandoutput. Features •TA6009FN/FNGoperatesfrom2.7to5.5VDCsinglepowersupplyvoltage. •Signalfromtheshocksensorisamplifiedaccordingtosettinggain,andisdetectedthro | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 |  | | |
SHOCK SENSOR IC ShockSensorIC TA6038FN/FNGdetectsanexistenceofexternalshockthroughtheshocksensorandoutput. Features •TA6038FN/FNGoperatesfrom2.7to5.5VDCsinglepowersupplyvoltage. •Signalfromtheshocksensorisamplifiedaccordingtosettinggain,andisdetectedthroughtheinterna | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
Shock Sensor IC ShockSensorIC TA6039FNdetectsanexistenceofexternalshockthroughtheshocksensorandoutput. ComparedwithTA6009FN,S/Nratioisimprovedby8dB. Itissuitableforapplicationswhichrequirelow-noiseoperation. Features ●TA6039FNoperatesfrom2.7to5.5VDCsinglepowersupplyv | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic ShocksensorICforsignalprocessing TA6042FNGperformsthesignalprocessinginresponsetotheamplificationsignalofashocksensor. Features •TA6042FNGisoperatedunder4.5~5.5VDCsinglepowersupplyvoltage. •Usercanmakenotch-filtercircuitwithOP-AMP2andexternalelement,a | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
Epitaxial Planar Silicon Transistor Arrays ®Features 1)CompactpackagingenablesPC boardmountingonabareminimum ofspace. 2}Awiderangeofcircuitsareavail- ablefordesignflexibility. | ROHMRohm 罗姆罗姆半导体集团 | | | |
Epitaxial Planar Silicon Transistor Arrays ®Features 1)CompactpackagingenablesPC boardmountingonabareminimum ofspace. 2}Awiderangeofcircuitsareavail- ablefordesignflexibility. | ROHMRohm 罗姆罗姆半导体集团 | | | |
Motor Driver Circuit Description TA6586isamonolithicICdesignedfordrivingbi-directionalDCmotor.Ithas twopinsoflogicinputsforcontrollingthedirection,forwardandbackward. Thecircuitfeaturegoodanti-interferenceperformance,smallstandbycurrentand lowoutputsaturationpressuredrop.Ithas | RZ-MICWuxi Ruizhi Microelectronics Co., Ltd. 睿智微电子无锡睿智微电子有限公司 |  | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 |  | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface-Mount PAR® Transient Voltage Suppressors FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Surface Mount PAR® Transient Voltage Suppressors FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
包装：散装 描述：UNIVERSAL THERMOCOUPLE PROBE WIT 测试与计量 配件 | FLIRFLIR Systems, Inc. 菲力尔美国菲力尔公司 |  | | |
Bipolar Linear Integrated Circuit Silicon Monolithic Shock Sensor IC (1 ch version) 文件：171.17 Kbytes Page：12 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
Shock Sensor IC (1 ch version) 文件：233.01 Kbytes Page：11 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
Shock Sensor IC (1 ch version) 文件：233.01 Kbytes Page：11 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
Shock Sensor IC (1 ch version) 文件：233.01 Kbytes Page：11 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
Isolated Transmitter 文件：345.5 Kbytes Page：5 Pages | MORNSUNGuangzhou Jinshengyang Technology Co., Ltd 金升阳广州金升阳科技有限公司 |  | | |
Electronic power general current transformer 文件：1.46917 Mbytes Page：1 Pages | YHDCBeijing Yaohuadechang Electronic Co., Ltd. 德昌电气设备德昌电气设备有限公司 |  | |
| 替换型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Integrated Circuit TV Video IF System | NTENTE Electronics |  | |
TA6产品属性
- 类型
描述
- 型号
TA6
- 制造商
Panasonic Industrial Company
- 功能描述
IC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LITTELFUSE/力特 |
2019+PB |
DO-221AC |
85000 |
原装正品 可含税交易 |
|||
TM/天微 |
22+ |
SOP32 |
50000 |
一级代理认准宏德 |
|||
ROHM |
24+ |
SIP10 |
30 |
||||
TOSHIBA |
2025+ |
SOP |
3925 |
全新原装、公司现货热卖 |
|||
TM/天微 |
2023 |
SOP32 |
20 |
全新原装 正品现货 |
|||
TM原装 |
20+ |
SOP32 |
12560 |
一级代理品牌原装正品 |
|||
RZ睿智微 |
21+ |
10560 |
十年专营,原装现货,假一赔十 |
||||
TXC |
24+ |
con |
50 |
现货常备产品原装可到京北通宇商城查价格 |
|||
MORNSUN |
24+ |
DIP |
35200 |
一级代理/放心采购 |
|||
TM/天微 |
60000 |
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- TA600PW
- TA5A4V
- TA5912
- TA5814
- TA-5702B
- TA5702B
- TA5702
- TA-5650
- TA5649A
- TA5649
- TA5628
- TA550C
- TA50A-P
- TA50A4V
- TA5.0
- TA4805S
- TA4805F
- TA4803S
- TA4803F
- TA4802S
- TA4802F
- TA470FD
- TA466E1
- TA465FD
- TA-4650
- TA4650
- TA462E1
- TA4558
- TA454E1
- TA310P
- TA2124P
- T911B1-T
- T900B1
- T78010AP
- T74LS86D1
- T74LS86B1
- T74LS83D1
- T74LS83B1
- T74LS74D1
- T74LS74B1
- T74LS670B1
TA6数据表相关新闻
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