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T900价格
参考价格：￥62.0255
型号：T900 品牌：Flambeau 备注：这里有T900多少钱，2026年最近7天走势，今日出价，今日竞价，T900批发/采购报价，T900行情走势销售排行榜，T900报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：T9002Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt | TI 德州仪器 |   | ||
丝印代码：T9002Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt | TI 德州仪器 | | ||
丝印代码：T9002Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt | TI 德州仪器 | | ||
丝印代码：T9002Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt | TI 德州仪器 | | ||
丝印代码：T9002Q；TLV900x-Q1 Low-Power RRIO 1MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt | TI 德州仪器 | | ||
丝印代码：T9004；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal | TI 德州仪器 | | ||
丝印代码：T9004；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal | TI 德州仪器 | | ||
丝印代码：T9004；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal | TI 德州仪器 | | ||
丝印代码：T9004Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt | TI 德州仪器 | | ||
丝印代码：T9004Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt | TI 德州仪器 | | ||
丝印代码：T9004Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt | TI 德州仪器 | | ||
丝印代码：T9004Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt | TI 德州仪器 | | ||
丝印代码：T9004S；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal | TI 德州仪器 | | ||
丝印代码：T9002Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 文件：1.23746 Mbytes Page：32 Pages | TI 德州仪器 | | ||
丝印代码：T9002Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 文件：1.89383 Mbytes Page：37 Pages | TI 德州仪器 | | ||
丝印代码：T9002Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 文件：2.70269 Mbytes Page：44 Pages | TI 德州仪器 | | ||
丝印代码：T9004；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：5.46205 Mbytes Page：86 Pages | TI 德州仪器 | | ||
丝印代码：T9004；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：5.3778 Mbytes Page：76 Pages | TI 德州仪器 | | ||
丝印代码：T9004；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：5.0411 Mbytes Page：81 Pages | TI 德州仪器 | | ||
丝印代码：T9004；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：4.16163 Mbytes Page：70 Pages | TI 德州仪器 | | ||
丝印代码：T9004；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：4.12702 Mbytes Page：70 Pages | TI 德州仪器 | | ||
丝印代码：T9004；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：6.33019 Mbytes Page：94 Pages | TI 德州仪器 | | ||
丝印代码：T9004Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 文件：2.70269 Mbytes Page：44 Pages | TI 德州仪器 | | ||
丝印代码：T9004S；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：4.16163 Mbytes Page：70 Pages | TI 德州仪器 | | ||
丝印代码：T9004S；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：4.12702 Mbytes Page：70 Pages | TI 德州仪器 | | ||
丝印代码：T9004S；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：6.33019 Mbytes Page：94 Pages | TI 德州仪器 | | ||
丝印代码：T9004S；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：5.0411 Mbytes Page：81 Pages | TI 德州仪器 | | ||
丝印代码：T9004S；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：5.3778 Mbytes Page：76 Pages | TI 德州仪器 | | ||
丝印代码：T9004S；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：5.46205 Mbytes Page：86 Pages | TI 德州仪器 | | ||
T9000全自动超声粗铝丝键合机 | ETC 知名厂家 | ETC | | |
ISDN Network Termination Node (NTN) Device | BOARDCOM 博通 | | ||
ISDN Network Termination Node (NTN) Device 文件：2.12785 Mbytes Page：126 Pages | AGERE | | ||
PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A | POINN | | ||
Ultra High Sensitivity Gateable Photon Counting Module Description The Photon Counting Head MP 900 series is designed for applications in all fields of single photon detection, e.g. chemoluminescence, bioluminescence, in-vitro assay, environmental measurements or pure research. It is an easy to use module, containing the Channel Photomultiplier, a hi | PERKINELMER | | ||
I/Q transmit modulator DESCRIPTION The SA900 is a monolithic high performance, multi-function transmit modulator for use in cellular radio applications, fabricated in QUBiC BiCMOS technology. The SA900 features both analog (AMPS) mode and complex, I/Q digital (NADC IS–136) mode quadrature modulation functions, a PLL sy | PHILIPS 飞利浦 | | ||
I/Q transmit modulator DESCRIPTION The SA900 is a monolithic high performance, multi-function transmit modulator for use in cellular radio applications, fabricated in QUBiC BiCMOS technology. The SA900 features both analog (AMPS) mode and complex, I/Q digital (NADC IS–136) mode quadrature modulation functions, a PLL sy | PHILIPS 飞利浦 | | ||
Ultra High Sensitivity Channel Photomultiplier Head Including High Voltage Power Supply 文件：562.12 Kbytes Page：5 Pages | PERKINELMER | |
| 替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Integrated Circuit AM/FM Radio Circuit w/Power Amp | NTE | NTE | | |
One Chip AM/FM Radio with Audio Power Amplifier | TEMIC | TEMIC | | |
One Chip AM/FM Radio with Audio Power Amplifier | ATMEL 爱特梅尔 | ATMEL | | |
AM/FM RADIO SYSTEM | ETC1 | ETC1 | |
T900产品属性
- 类型
描述
- 型号
T900
- 功能描述
罩类、盒类及壳类产品 13-1/2x9-1/2x2-3/16(0.801cf)4+Cmprtmnts
- RoHS
否
- 制造商
Bud Industries
- 产品
Boxes
- 外部深度
6.35 mm
- 外部宽度
6.35 mm
- 外部高度
2.56 mm NEMA
- 额定值
IP
- 材料
Acrylonitrile Butadiene Styrene(ABS)
- 颜色
Red
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
26+ |
N/A |
360000 |
只有原装 可配单 |
|||
TI/德州仪器 |
21+ |
SOP-8 |
1145 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TI(德州仪器) |
23+ |
SOIC-8 |
13650 |
公司只做原装正品,假一赔十 |
|||
TI(德州仪器) |
2450+ |
SMD |
9850 |
只做原装正品代理渠道!假一赔三! |
|||
TI/德州仪器 |
22+ |
SOP-8 |
9000 |
原装正品,支持实单! |
|||
TI(德州仪器) |
23+ |
标准封装 |
6000 |
正规渠道,只有原装! |
|||
Texas Instruments |
24+25+ |
16500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
||||
TI |
25+ |
SOP-8 |
11000 |
原装正品 有挂有货 假一赔十 |
|||
TI(德州仪器) |
2021+ |
SOIC-8 |
499 |
||||
TI(德州仪器) |
24+ |
N/A |
6000 |
原厂原装，价格优势，欢迎洽谈！ |
T900规格书下载地址
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T900数据表相关新闻
T73YP504KT20
优势渠道
2023-10-18T9G0161203DH
T9G0161203DH
2023-6-7T810-600B-TR
T810-600B-TR
2023-3-16T90S1D12-24
T90S1D12-24
2021-1-15TA1343NG(HZ)，TA1358AF，TA1360ANG，TA1363AFG，TA1366FG，
TA1343NG(HZ)，TA1358AF，TA1360ANG，TA1363AFG，TA1366FG，
2020-3-23T835H-6I（原厂授权中国分销商）
主要参数： 分立半导体产品 电压 - 断态 ：600V 电流 - 通态（It（RMS））（最大值）： 8A 电压 （Vgt）（最大值）： 1V 电流 50，60Hz（Itsm）： 80A，84A 电流 （Igt）（最大值）： 35mA 电流 - 保持（Ih）（最大值）： 35mA 工作温度 ：-40°C ~ 150°C 安装类型： 通孔 封装 ：TO-220-3
2020-3-6
DdatasheetPDF页码索引
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