丝印代码：T9002Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt

丝印代码：T9002Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt

丝印代码：T9002Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt

丝印代码：T9002Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt

丝印代码：T9002Q；TLV900x-Q1 Low-Power RRIO 1MHz Automotive Operational Amplifier

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt

丝印代码：T9004；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal

丝印代码：T9004；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal

丝印代码：T9004；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal

丝印代码：T9004Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt

丝印代码：T9004Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt

丝印代码：T9004Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt

丝印代码：T9004Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt

丝印代码：T9004S；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal

丝印代码：T9002Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier

文件：1.23746 Mbytes Page：32 Pages

丝印代码：T9002Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier

文件：1.89383 Mbytes Page：37 Pages

丝印代码：T9002Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier

文件：2.70269 Mbytes Page：44 Pages

丝印代码：T9004；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

文件：5.46205 Mbytes Page：86 Pages

丝印代码：T9004；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

文件：5.3778 Mbytes Page：76 Pages

丝印代码：T9004；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

文件：5.0411 Mbytes Page：81 Pages

丝印代码：T9004；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

文件：4.16163 Mbytes Page：70 Pages

丝印代码：T9004；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

文件：4.12702 Mbytes Page：70 Pages

丝印代码：T9004；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

文件：6.33019 Mbytes Page：94 Pages

丝印代码：T9004Q；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier

文件：2.70269 Mbytes Page：44 Pages

丝印代码：T9004S；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

文件：4.16163 Mbytes Page：70 Pages

丝印代码：T9004S；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

文件：4.12702 Mbytes Page：70 Pages

丝印代码：T9004S；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

文件：6.33019 Mbytes Page：94 Pages

丝印代码：T9004S；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

文件：5.0411 Mbytes Page：81 Pages

丝印代码：T9004S；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

文件：5.3778 Mbytes Page：76 Pages

丝印代码：T9004S；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

文件：5.46205 Mbytes Page：86 Pages

T9000全自动超声粗铝丝键合机

T9000系列全自动超声粗铝丝键合机为功率半导体器件提供稳定、高效的键合方案。适用于多类型功率模块（IGBT模块、SiC模块、工业IGBT模块），广泛应用于电力电子、汽车电子、消费电子、新能源等行业。 • 稳定可靠稳固的大理石运动平台，将焊接过程中的设备振动降到最低，为长效工作精度提供保障采用Y轴龙门双驱控制，保证大行程直线运动的高同步性\n• 高效率足够大的焊接区域，减少装夹次数和PR时间，带来更高的生产力\n• 灵敏的送线监测，可及时实现换线预提示和焊接异常报警操作便捷图形化的键合头辅助安装功能，为操作人员穿线、更换劈刀等常规维护提供视觉支持\n• 简单清晰的图文堆叠界面，实现友好的人机交互，使用户操作更加便捷扩展灵活大侧窗设计，可完美搭配各种⾃动上下料系统\n•;

ISDN Network Termination Node (NTN) Device

ISDN Network Termination Node (NTN) Device

文件：2.12785 Mbytes Page：126 Pages

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A

Ultra High Sensitivity Gateable Photon Counting Module

Description The Photon Counting Head MP 900 series is designed for applications in all fields of single photon detection, e.g. chemoluminescence, bioluminescence, in-vitro assay, environmental measurements or pure research. It is an easy to use module, containing the Channel Photomultiplier, a hi

I/Q transmit modulator

DESCRIPTION The SA900 is a monolithic high performance, multi-function transmit modulator for use in cellular radio applications, fabricated in QUBiC BiCMOS technology. The SA900 features both analog (AMPS) mode and complex, I/Q digital (NADC IS–136) mode quadrature modulation functions, a PLL sy

I/Q transmit modulator

DESCRIPTION The SA900 is a monolithic high performance, multi-function transmit modulator for use in cellular radio applications, fabricated in QUBiC BiCMOS technology. The SA900 features both analog (AMPS) mode and complex, I/Q digital (NADC IS–136) mode quadrature modulation functions, a PLL sy

Ultra High Sensitivity Channel Photomultiplier Head Including High Voltage Power Supply

文件：562.12 Kbytes Page：5 Pages

Integrated Circuit AM/FM Radio Circuit w/Power Amp

One Chip AM/FM Radio with Audio Power Amplifier

One Chip AM/FM Radio with Audio Power Amplifier

AM/FM RADIO SYSTEM