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T820价格
参考价格：￥36.8125
型号：T8201 品牌：Electroswitch 备注：这里有T820多少钱，2025年最近7天走势，今日出价，今日竞价，T820批发/采购报价，T820行情走势销售排行榜，T820报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
T820 | Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX |   | |
T820 | 系统级安全的高性能5G SoC芯片平台 | SPREADTRUM 紫光展锐 | | |
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts)
| POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
SNUBBERLESS TRIAC DESCRIPTION Based on ST’ Snubberless technology providing high commutation performances, the T820-600W/800W are specially recommended for use on inductive loads, thanks to their high commutation performances, such as washing-machines drum motor controllers. They comply with UL standards (ref. | STMICROELECTRONICS 意法半导体 | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
Phase Control SCR (500-600 Amperes Avg 2200-4200 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
SNUBBERLESS TRIAC DESCRIPTION Based on ST’ Snubberless technology providing high commutation performances, the T820-600W/800W are specially recommended for use on inductive loads, thanks to their high commutation performances, such as washing-machines drum motor controllers. They comply with UL standards (ref. | STMICROELECTRONICS 意法半导体 | | ||
SNUBBERLESS TRIAC DESCRIPTION The T820/830W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppres sion of R-C network, and is suitable for applica tions such as phase control and static switch on inductive | STMICROELECTRONICS 意法半导体 | | ||
ATM Interconnect Description The CelXpres T8207 device integrates all of the required functionality to transport ATM cells across a backplane architecture with high-speed cell traffic exceeding 1.5 Gbits/s to a maximum of 32 destinations. The management of multiple service categories and monitoring of performance | agere | | ||
SNUBBERLESS TRIAC DESCRIPTION Based on ST’ Snubberless technology providing high commutation performances, the T820-600W/800W are specially recommended for use on inductive loads, thanks to their high commutation performances, such as washing-machines drum motor controllers. They comply with UL standards (ref. | STMICROELECTRONICS 意法半导体 | | ||
SNUBBERLESS TRIAC DESCRIPTION The T820/830W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppres sion of R-C network, and is suitable for applica tions such as phase control and static switch on inductive | STMICROELECTRONICS 意法半导体 | | ||
Phase Control SCR (750 Amperes Average 2400 Volts) Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ | POWEREX | | ||
ATM Interconnect Description The CelXpres T8208 device integrates all of the required functionality to transport ATM cells across a backplane architecture with high-speed cell traffic exceeding 1.5 Gbits/s to a maximum of 32 destinations. The management of multiple service categories and monitoring of performance | agere | |
T820产品属性
- 类型
描述
- 型号
T820
- 制造商
GE Sensing & Inspection Technologies
- 功能描述
CO2/TEMP SENS WALL MNT DUAL OUT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2016+ |
TO220 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
AGERE |
25+ |
BGA |
12496 |
AGERE原装正品T8208BAL2即刻询购立享优惠#长期有货 |
|||
ELECTROSWITCH |
24+ |
161706 |
明嘉莱只做原装正品现货 |
||||
LUCEMT |
2138+ |
BGA |
8960 |
专营BGA,QFP原装现货,假一赔十 |
|||
LUCENT |
BGA |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Eaton |
25+ |
30 |
公司优势库存 热卖中!! |
||||
LSI/CSI传奇 |
2023+ |
BGA |
11856 |
一级代理优势现货,全新正品直营店 |
|||
ST/意法半导体 |
24+ |
TO-220AB-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
ST/意法半导体 |
2022+ |
TO-220AB-3 |
6000 |
只做原装，可提供样品 |
|||
LUCENT |
2450+ |
BGA |
6540 |
只做原装正品现货!或订货假一赔十! |
T820规格书下载地址
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- T81331G
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- T8116T
- T8116NL
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T820数据表相关新闻
T73YP504KT20
优势渠道
2023-10-18T9G0161203DH
T9G0161203DH
2023-6-7T810-600B-TR
T810-600B-TR
2023-3-16T90S1D12-24
T90S1D12-24
2021-1-15T6V0S5-7
https://hch01.114ic.com/
2020-11-13T835H-6I（原厂授权中国分销商）
主要参数： 分立半导体产品 电压 - 断态 ：600V 电流 - 通态（It（RMS））（最大值）： 8A 电压 （Vgt）（最大值）： 1V 电流 50，60Hz（Itsm）： 80A，84A 电流 （Igt）（最大值）： 35mA 电流 - 保持（Ih）（最大值）： 35mA 工作温度 ：-40°C ~ 150°C 安装类型： 通孔 封装 ：TO-220-3
2020-3-6
DdatasheetPDF页码索引
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