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T700价格
参考价格:¥37.4012
型号:T7000 品牌:Flambeau 备注:这里有T700多少钱,2025年最近7天走势,今日出价,今日竞价,T700批发/采购报价,T700行情走势销售排行榜,T700报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
T700 | PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | ||
T700 | PHASECONTROLSCR Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | ||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(300-350Amperes2400Volts) Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,compressionbondedencapsulated(CBE)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □Hermeti | POWEREX Powerex Power Semiconductors | |||
Netz-ThyristorPhaseControlThyristor Netz-ThyristorPhaseControlThyristor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | |||
Identifyareaswithloworsubstandardventilation 文件:76.08 Kbytes Page:4 Pages | AMPHENOLAmphenol Corporation 安费诺集团美国安费诺集团 | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
封装/外壳:TO-209 变异型 包装:散装 描述:SCR 200V 470A TO209 分立半导体产品 晶闸管 - SCR | PowerexIncPowerex, Inc 鑫鸿鑫鸿电子 | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
封装/外壳:TO-209 变异型 包装:散装 描述:SCR 200V 550A TO209 分立半导体产品 晶闸管 - SCR | PowerexIncPowerex, Inc 鑫鸿鑫鸿电子 | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
Identifyareaswithloworsubstandardventilation 文件:76.08 Kbytes Page:4 Pages | AMPHENOLAmphenol Corporation 安费诺集团美国安费诺集团 | |||
Identifyareaswithloworsubstandardventilation 文件:76.08 Kbytes Page:4 Pages | AMPHENOLAmphenol Corporation 安费诺集团美国安费诺集团 | |||
ALLDIMENSIONSINMM[INCH] 文件:30.6 Kbytes Page:1 Pages | E-SWITCH E-switch | |||
ALLDIMENSIONSINMM[INCH] 文件:30.04 Kbytes Page:1 Pages | E-SWITCH E-switch | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
ALLDIMENSIONSINMM[INCH] 文件:30.05 Kbytes Page:1 Pages | E-SWITCH E-switch | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
ALLDIMENSIONSINMM[INCH] 文件:30.05 Kbytes Page:1 Pages | E-SWITCH E-switch | |||
AllDimensionsInMM 文件:27.92 Kbytes Page:1 Pages | E-SWITCH E-switch | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors | |||
PhaseControlSCR(250-350Amperes200-2200Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX Powerex Power Semiconductors |
T700产品属性
- 类型
描述
- 型号
T700
- 制造商
Datak Corporation
- 功能描述
Conn Circular F 8 POS ST Cable Mount 8 Terminal 1 Port
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PULSE |
SOP |
1000 |
正品原装--自家现货-实单可谈 |
||||
PULSE |
22+ |
NA |
162862 |
原装正品现货,可开13个点税 |
|||
PULSE |
723 |
150 |
公司优势库存 热卖中! |
||||
PULSE |
2016+ |
MODULE |
6523 |
只做进口原装现货!假一赔十! |
|||
PULSE |
2016+ |
SOP |
8850 |
只做原装,假一罚十,公司专营变压器,滤波器! |
|||
Infineon/英飞凌 |
23+ |
BG-T5726K-1 |
12700 |
买原装认准中赛美 |
|||
PULSE |
24+ |
2568 |
原装优势!绝对公司现货 |
||||
PULSE |
24+ |
SOP |
6868 |
原装现货,可开13%税票 |
|||
PRX |
2023+ |
MODULE |
42 |
主打螺丝模块系列 |
|||
POWEREXINC |
新 |
231 |
全新原装 货期两周 |
T700规格书下载地址
T700参数引脚图相关
- tl7705
- tl494
- tl431
- tip127
- tip122
- td手机
- tda8844
- tda8361
- tda8023tt
- tda7294
- tda6101
- tda2822m
- tda2822
- tda2030功放电路图
- tda2030功放电路
- tda2030a
- tda2030
- tda2003功放电路图
- tda16846
- t7272
- T70YE50010
- T70TEI
- T70KW4EI
- T70HB-X
- T70DW8
- T70DB-X
- T70CEI10
- T70CCIW-X
- T70BWH10
- T70BEI8
- T702BCIW-X
- T7026-PGP
- T700N
- T7006
- T700412PK
- T700400
- T7004
- T7003
- T700206
- T700203
- T700202
- T700201
- T700200
- T7002
- T7001I
- T7001D
- T70012MX
- T700123504BY
- T700109
- T700106
- T700103
- T700101
- T700100
- T7001
- T7000SK
- T70002
- T7000
- T-700
- T7_13
- T-7
- T6YA473KT20
- T6XB474KT20
- T6XB473KT20
- T6X12
- T6W1NR-F
- T6V0S5
- T6M81A
- T6M74A
- T6M72
- T6M45
- T6M27S
- T6M23A
- T6M19
- T6M14S
- T6LE2
- T6LD4
- T6L37A
- T6L24
- T6K41
- T6K34
- T6K14
- T6K11
- T6K01
- T6F1.00SV
- T6F0.75SV
- T6F0.63SV
- T6F0.50SV
- T6F0.38SV
- T6F0.25SV
- T6-DDI
- T6C84
- T6A40L
- T6A20L
- T6A20
- T6A100L
- T68A/M
- T68-2C-120-90-0.06
- T68-2C-120-90-0.05
T700数据表相关新闻
T6743-40K-E
优势渠道
2023-10-26T73YP504KT20
优势渠道
2023-10-18T620163004DN
T620163004DN
2023-6-7T810-600B-TR
T810-600B-TR
2023-3-16T6V0S5-7
https://hch01.114ic.com/
2020-11-13T835H-6I(原厂授权中国分销商)
主要参数: 分立半导体产品 电压-断态:600V 电流-通态(It(RMS))(最大值):8A 电压(Vgt)(最大值):1V 电流50,60Hz(Itsm):80A,84A 电流(Igt)(最大值):35mA 电流-保持(Ih)(最大值):35mA 工作温度:-40°C~150°C 安装类型:通孔 封装:TO-220-3
2020-3-6
DdatasheetPDF页码索引
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