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T700价格
参考价格:¥37.4012
型号:T7000 品牌:Flambeau 备注:这里有T700多少钱,2025年最近7天走势,今日出价,今日竞价,T700批发/采购报价,T700行情走势销售排行榜,T700报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
T700 | Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | ||
T700 | PHASE CONTROL SCR Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | ||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Phase Control SCR (300-350 Amperes 2400 Volts) Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, compression bonded encapsulated (CBE) devices employing the field-proven amplifying(di/namic) gate. Features: □ Low On-State Voltage □ High di/dt □ High dv/dt □ Hermeti | POWEREX | |||
Netz-Thyristor Phase Control Thyristor Netz-Thyristor Phase Control Thyristor | Infineon 英飞凌 | |||
Identify areas with low or substandard ventilation 文件:76.08 Kbytes Page:4 Pages | AMPHENOL 安费诺 | |||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX | |||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX | |||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX | |||
封装/外壳:TO-209 变异型 包装:散装 描述:SCR 200V 470A TO209 分立半导体产品 晶闸管 - SCR | ETC 知名厂家 | ETC | ||
T700023004BY,Discrete Thyristors,300 Amperes, 200 Volts,Phase Control SCR / Inverter Grade SCR,Main Applications - battery chargers, flexible AC transmissions, induction heating, medical equipment, medium volume inverters, motor controls, power supplies, | POWEREX | |||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX | |||
封装/外壳:TO-209 变异型 包装:散装 描述:SCR 200V 550A TO209 分立半导体产品 晶闸管 - SCR | ETC 知名厂家 | ETC | ||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX | |||
T700042504BY,Discrete Thyristors,250 Amperes, 400 Volts,Phase Control SCR / Inverter Grade SCR,Main Applications - battery chargers, flexible AC transmissions, induction heating, medical equipment, medium volume inverters, motor controls, power supplies, | POWEREX | |||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX | |||
T700043004BY,Discrete Thyristors,300 Amperes, 400 Volts,Phase Control SCR / Inverter Grade SCR,Main Applications - battery chargers, flexible AC transmissions, induction heating, medical equipment, medium volume inverters, motor controls, power supplies, | POWEREX | |||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX | |||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX | |||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX | |||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX | |||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX | |||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX | |||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX | |||
Identify areas with low or substandard ventilation 文件:76.08 Kbytes Page:4 Pages | AMPHENOL 安费诺 | |||
Identify areas with low or substandard ventilation 文件:76.08 Kbytes Page:4 Pages | AMPHENOL 安费诺 | |||
ALL DIMENSIONS IN MM[INCH] 文件:30.6 Kbytes Page:1 Pages | E-SWITCH | |||
ALL DIMENSIONS IN MM[INCH] 文件:30.04 Kbytes Page:1 Pages | E-SWITCH | |||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX | |||
ALL DIMENSIONS IN MM[INCH] 文件:30.05 Kbytes Page:1 Pages | E-SWITCH | |||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX | |||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX | |||
ALL DIMENSIONS IN MM[INCH] 文件:30.05 Kbytes Page:1 Pages | E-SWITCH | |||
All Dimensions In MM 文件:27.92 Kbytes Page:1 Pages | E-SWITCH | |||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX | |||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX | |||
Phase Control SCR (250-350 Amperes 200-2200 Volts) 文件:241.06 Kbytes Page:6 Pages | POWEREX |
T700产品属性
- 类型
描述
- 型号
T700
- 制造商
Datak Corporation
- 功能描述
Conn Circular F 8 POS ST Cable Mount 8 Terminal 1 Port
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PULSE |
2016+ |
SOP |
8850 |
只做原装,假一罚十,公司专营变压器,滤波器! |
|||
PULSE |
MODULE |
125000 |
一级代理原装正品,价格优势,长期供应! |
||||
PULSE |
24+ |
NA/ |
3412 |
原厂直销,现货供应,账期支持! |
|||
PULSE |
1736+ |
SOP |
15238 |
原厂优势渠道 |
|||
PRX |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
PULSE |
25+ |
150 |
公司优势库存 热卖中! |
||||
Infineon(英飞凌) |
24+ |
- |
911 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
Infineon/英飞凌 |
24+ |
BG-T5726K-1 |
25000 |
原装正品,假一赔十! |
|||
PULSE |
2450+ |
6540 |
只做原厂原装现货或订货假一赔十! |
T700规格书下载地址
T700参数引脚图相关
- tl7705
- tl494
- tl431
- tip127
- tip122
- td手机
- tda8844
- tda8361
- tda8023tt
- tda7294
- tda6101
- tda2822m
- tda2822
- tda2030功放电路图
- tda2030功放电路
- tda2030a
- tda2030
- tda2003功放电路图
- tda16846
- t7272
- T70YE50010
- T70TEI
- T70KW4EI
- T70HB-X
- T70DW8
- T70DB-X
- T70CEI10
- T70CCIW-X
- T70BWH10
- T70BEI8
- T702BCIW-X
- T7026-PGP
- T700N
- T7006
- T700412PK
- T700400
- T7004
- T7003
- T700206
- T700203
- T700202
- T700201
- T700200
- T7002
- T7001I
- T7001D
- T70012MX
- T700123504BY
- T700109
- T700106
- T700103
- T700101
- T700100
- T7001
- T7000SK
- T70002
- T7000
- T-700
- T7_13
- T-7
- T6YA473KT20
- T6XB474KT20
- T6XB473KT20
- T6X12
- T6W1NR-F
- T6V0S5
- T6M81A
- T6M74A
- T6M72
- T6M45
- T6M27S
- T6M23A
- T6M19
- T6M14S
- T6LE2
- T6LD4
- T6L37A
- T6L24
- T6K41
- T6K34
- T6K14
- T6K11
- T6K01
- T6F1.00SV
- T6F0.75SV
- T6F0.63SV
- T6F0.50SV
- T6F0.38SV
- T6F0.25SV
- T6-DDI
- T6C84
- T6A40L
- T6A20L
- T6A20
- T6A100L
- T68A/M
- T68-2C-120-90-0.06
- T68-2C-120-90-0.05
T700数据表相关新闻
T6743-40K-E
优势渠道
2023-10-26T73YP504KT20
优势渠道
2023-10-18T620163004DN
T620163004DN
2023-6-7T810-600B-TR
T810-600B-TR
2023-3-16T6V0S5-7
https://hch01.114ic.com/
2020-11-13T835H-6I(原厂授权中国分销商)
主要参数: 分立半导体产品 电压 - 断态 :600V 电流 - 通态(It(RMS))(最大值): 8A 电压 (Vgt)(最大值): 1V 电流 50,60Hz(Itsm): 80A,84A 电流 (Igt)(最大值): 35mA 电流 - 保持(Ih)(最大值): 35mA 工作温度 :-40°C ~ 150°C 安装类型: 通孔 封装 :TO-220-3
2020-3-6
DdatasheetPDF页码索引
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