位置：首页 > IC中文资料第7379页 > T431616E
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
T431616E | 1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis | TMTTaiwan Memory Technology Taiwan Memory Technology |  |   |
1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis | TMTTaiwan Memory Technology Taiwan Memory Technology | | | |
1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis | TMTTaiwan Memory Technology Taiwan Memory Technology | | | |
1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis | TMTTaiwan Memory Technology Taiwan Memory Technology | | | |
1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis | TMTTaiwan Memory Technology Taiwan Memory Technology | | | |
1Mx16SDRAM???? GRNERALDESCRIPTION TheT431616Ais16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithhighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleone | TMTTaiwan Memory Technology Taiwan Memory Technology | | | |
1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM GRNERALDESCRIPTION TheT431616Bis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithhighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleone | TMTTaiwan Memory Technology Taiwan Memory Technology | | | |
1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM GRNERALDESCRIPTION TheT431616Cis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithhighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleon | TMTTaiwan Memory Technology Taiwan Memory Technology | | | |
1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis | TMTTaiwan Memory Technology Taiwan Memory Technology | | |
T431616E产品属性
- 类型
描述
- 型号
T431616E
- 制造商
TMT
- 制造商全称
TMT
- 功能描述
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
1738+ |
TO-92 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
原厂 |
N/A |
90000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
EUPEC |
16+ |
MODULE |
2100 |
公司大量全新现货 随时可以发货 |
|||
TI |
23+ |
TSOP8 |
1520 |
||||
TI |
06+ |
SSOP8 |
182 |
||||
TI/德州仪器 |
22+ |
MSOP8 |
25000 |
只做原装,原装,假一罚十 |
|||
TI/德州仪器 |
2021+ |
SOP8 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
EUPEC |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
2023+ |
SSOP8 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
||||
TI/德州仪器 |
MSOP8 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
T431616E芯片相关品牌
T431616E规格书下载地址
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2019-9-17
DdatasheetPDF页码索引
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