位置：首页 > IC中文资料第7379页 > T431616E
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
T431616E | 1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis | TMTTaiwan Memory Technology 凯钰科技凯钰科技股份有限公司 |  |   |
1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis | TMTTaiwan Memory Technology 凯钰科技凯钰科技股份有限公司 | | | |
1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis | TMTTaiwan Memory Technology 凯钰科技凯钰科技股份有限公司 | | | |
1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis | TMTTaiwan Memory Technology 凯钰科技凯钰科技股份有限公司 | | | |
1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis | TMTTaiwan Memory Technology 凯钰科技凯钰科技股份有限公司 | | | |
1Mx16SDRAM???? GRNERALDESCRIPTION TheT431616Ais16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithhighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleone | TMTTaiwan Memory Technology 凯钰科技凯钰科技股份有限公司 | | | |
1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM GRNERALDESCRIPTION TheT431616Bis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithhighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleone | TMTTaiwan Memory Technology 凯钰科技凯钰科技股份有限公司 | | | |
1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM GRNERALDESCRIPTION TheT431616Cis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithhighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleon | TMTTaiwan Memory Technology 凯钰科技凯钰科技股份有限公司 | | | |
1Mx16SDRAM512Kx16bitx2BanksSynchronousDRAM GRNERALDESCRIPTION TheT431616D/ESDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksis | TMTTaiwan Memory Technology 凯钰科技凯钰科技股份有限公司 | | |
T431616E产品属性
- 类型
描述
- 型号
T431616E
- 制造商
TMT
- 制造商全称
TMT
- 功能描述
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI有量 |
24+ |
NA/ |
3505 |
原厂直销,现货供应,账期支持! |
|||
TI |
23+ |
MSOP8 |
20000 |
全新原装假一赔十 |
|||
TI |
1738+ |
TO-92 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
EUPEC |
24+ |
MODULE |
2100 |
公司大量全新现货 随时可以发货 |
|||
TI/德州仪器 |
22+ |
MSOP8 |
25000 |
只做原装,原装,假一罚十 |
|||
TI/德州仪器 |
23+ |
MSOP8 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
TI |
00+ |
MSOP8 |
1987 |
全新原装进口自己库存优势 |
|||
TI |
24+ |
TSSOP8 |
3629 |
原装优势!房间现货!欢迎来电! |
|||
KEMET |
新 |
100 |
全新原装 货期两周 |
||||
TI有批量 |
21+ |
SOP8-5.2 |
10000 |
原装现货假一罚十 |
T431616E芯片相关品牌
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2019-9-17
DdatasheetPDF页码索引
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