Power MOSFET 45 A, 25 V, N−Channel DPAK

Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters • These are Pb−Free Devices

N-Channel 30-V (D-S) MOSFET

文件：1.01874 Mbytes Page：8 Pages

N CHANNEL ENHANCEMENT MODE POWER MOSFET

Power MOSFETs from Silicon Standardprovide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widelypreferred for commercialand industrial applications and suited for low voltage applications su

Low Gate Charge Simple Drive Requirement

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for all commercial-industrial applications and suited for low voltage applica

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Gen III Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • DC/DC Conversion - System Power

N-Channel 30-V (D-S) MOSFET

文件：959.97 Kbytes Page：8 Pages

Fast Switching Characteristic

文件：56.65 Kbytes Page：5 Pages