Silicon NPN Phototransistor

DESCRIPTION T1070P ambient light sensor chip is a silicon NPN epitaxial planar phototransistor. It is sensitive to visible light much like the human eye and has peak sensitivity at 570 nm. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain pred

Silicon NPN Phototransistor

DESCRIPTION T1070P ambient light sensor chip is a silicon NPN epitaxial planar phototransistor. It is sensitive to visible light much like the human eye and has peak sensitivity at 570 nm. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain pred

Silicon NPN Phototransistor

文件：91.98 Kbytes Page：4 Pages

Silicon NPN Phototransistor

文件：90.37 Kbytes Page：4 Pages

Silicon NPN Phototransistor

Silicon NPN Phototransistor

DESCRIPTION T1070P ambient light sensor chip is a silicon NPN epitaxial planar phototransistor. It is sensitive to visible light much like the human eye and has peak sensitivity at 570 nm. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain pred

Silicon NPN Phototransistor

Package type: chip\nPackage form: single chip\nDimensions (L x W x H in mm): 0.72 x 0.72 x 0.22;

Silicon NPN Phototransistor

DESCRIPTION T1070P ambient light sensor chip is a silicon NPN epitaxial planar phototransistor. It is sensitive to visible light much like the human eye and has peak sensitivity at 570 nm. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain pred

Silicon NPN Phototransistor

DESCRIPTION T1070P ambient light sensor chip is a silicon NPN epitaxial planar phototransistor. It is sensitive to visible light much like the human eye and has peak sensitivity at 570 nm. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain pred

Silicon NPN Phototransistor

Package type: chip\nPackage form: single chip\nDimensions (L x W x H in mm): 0.72 x 0.72 x 0.22;

Silicon NPN Phototransistor

文件：90.37 Kbytes Page：4 Pages

Silicon NPN Phototransistor

文件：90.37 Kbytes Page：4 Pages

Silicon NPN Phototransistor

文件：91.98 Kbytes Page：4 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

SWITCHMODE??Power Rectifiers

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

Multistandard programmable analog CMOS transmission IC

GENERAL DESCRIPTION The PCA1070 is a CMOS integrated circuit performing all speech and line interface functions in fully electronic telephone sets. The device requires a minimum of external components. The transmission parameters are programmable via the I2C-bus. This makes the IC adaptable to ne

Multistandard programmable analog CMOS transmission IC

GENERAL DESCRIPTION The PCA1070 is a CMOS integrated circuit performing all speech and line interface functions in fully electronic telephone sets. The device requires a minimum of external components. The transmission parameters are programmable via the I2C-bus. This makes the IC adaptable to ne

Multistandard programmable analog CMOS transmission IC

GENERAL DESCRIPTION The PCA1070 is a CMOS integrated circuit performing all speech and line interface functions in fully electronic telephone sets. The device requires a minimum of external components. The transmission parameters are programmable via the I2C-bus. This makes the IC adaptable to ne