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MBR1070

SWITCHMODE??Power Rectifiers

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

MOTOROLA

摩托罗拉

MBR1070

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

SIRECTIFIER

矽莱克电子

MBR1070

SCHOTTKY BARRIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C,0.25”(6.35mm) from case for 10 seco

SY

顺烨电子

MBR1070

10A SCHOTTKY RECTIFIER

DIGITRON

MBR1070

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current -10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦

CHENDA

辰达半导体

MBR1070

丝印代码:MDDMBR1070;SCHOTTKY BARRIER RECTIFIER

文件:1.23352 Mbytes Page:2 Pages

CHENDA

辰达半导体

MBR1070

High Tjm Low IRRM Schottky Barrier Diodes

文件:112.91 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

MBR1070

Wide Temperature Range and High Tjm Sxhottky Barrier Rectifiers

文件:45.2 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

SIRECTIFIER

矽莱克电子

SCHOTTKY BARRIER RECTIFIER

FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Ap

JIANGSU

长电科技

10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

DIODES

美台半导体

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current -10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦

CHENDA

辰达半导体

10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

DIODES

美台半导体

SCHOTTKY BARRIER RECTIFIER

FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Ap

JIANGSU

长电科技

High Tjm Low IRRM Schottky Barrier Diodes

文件:112.91 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

High Tjm Low IRRM Schottky Barrier Diodes

文件:92.52 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

文件:64.379 Kbytes Page:2 Pages

DIODES

美台半导体

丝印代码:MDDMBR1070CT;SCHOTTKY BARRIER RECTIFIER

文件:573 Kbytes Page:2 Pages

CHENDA

辰达半导体

封装/外壳:TO-220-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 70V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

DIODES

美台半导体

DIODE ARRAY SCHOTTKY 70V TO220AB

DIODES

美台半导体

High Tjm Low IRRM Schottky Barrier Diodes

文件:92.52 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

肖特基二极管

FOSAN

富信半导体

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

POLYFET

Multistandard programmable analog CMOS transmission IC

GENERAL DESCRIPTION The PCA1070 is a CMOS integrated circuit performing all speech and line interface functions in fully electronic telephone sets. The device requires a minimum of external components. The transmission parameters are programmable via the I2C-bus. This makes the IC adaptable to ne

PHILIPS

飞利浦

Multistandard programmable analog CMOS transmission IC

GENERAL DESCRIPTION The PCA1070 is a CMOS integrated circuit performing all speech and line interface functions in fully electronic telephone sets. The device requires a minimum of external components. The transmission parameters are programmable via the I2C-bus. This makes the IC adaptable to ne

PHILIPS

飞利浦

Multistandard programmable analog CMOS transmission IC

GENERAL DESCRIPTION The PCA1070 is a CMOS integrated circuit performing all speech and line interface functions in fully electronic telephone sets. The device requires a minimum of external components. The transmission parameters are programmable via the I2C-bus. This makes the IC adaptable to ne

PHILIPS

飞利浦

MBR1070产品属性

  • 类型

    描述

  • VRRM(V):

    70

  • IO(mA):

    10000

  • IFSM(A):

    120

  • IR(uA):

    100

  • VF(V):

    0.95

  • PD(mW):

    2

更新时间:2026-5-13 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Diodes Incorporated
25+
TO-220-3
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
Diodes Incorporated
25+
TO-220-3
6843
样件支持,可原厂排单订货!
MOTO
96+
TO-220-2
227
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON/IR
26+
TO-220AC
6893
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
NEXPERIA/安世
23+
SOT338-1
69820
终端可以免费供样,支持BOM配单!
ON/安森美
23+
TO-220
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
MOTO
23+
TO-220-2
12800
公司只有原装 欢迎来电咨询。
MCC
17+
TO-220AC
6200
ON
23+
TO-220-2
11846
一级代理商现货批发,原装正品,假一罚十
JXND/嘉兴南电
24+
TO-220F
50000
全新原装,一手货源,全场热卖!

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