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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
T-18300 | ISDN S-Interface Low Profile SMT Dual Transformers 文件：48.87 Kbytes Page：1 Pages | RHOMBUS-IND |   | |
NPN microwave power transistor DESCRIPTION NPN silicon planar epitaxial microwave power transistor in an SOT437A glued cap metal ceramic flange package, with emitter connected to flange. FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure | PHILIPS 飞利浦 | | ||
NPN microwave power transistor DESCRIPTION NPN silicon planar epitaxial microwave power transistor in an SOT437A glued cap metal ceramic flange package, with emitter connected to flange. FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure | PHILIPS 飞利浦 | | ||
NPN microwave power transistor DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with emitter connected to flange. FEATURES • Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits • Diffused emitter ballasti | PHILIPS 飞利浦 | | ||
NPN microwave power transistor DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with emitter connected to flange. FEATURES • Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits • Diffused emitter ballasti | PHILIPS 飞利浦 | |
T-18300产品属性
- 类型
描述
- 型号
T-18300
- 制造商
RHOMBUS-IND
- 制造商全称
Rhombus Industries Inc.
- 功能描述
ISDN S-Interface Low Profile SMT Dual Transformers
T-18300规格书下载地址
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DdatasheetPDF页码索引
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