DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with emitter connected to flange.

FEATURES

• Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits

• Diffused emitter ballasting resistors provide excellent current sharing and withstanding at a high VSWR

• Interdigitated structure provides high emitter efficiency

• Gold metallization realizes very good stability of the characteristics and excellent lifetime

• Multicell geometry gives good balance of dissipated power and low thermal resistance.

APPLICATIONS

Intended for use in common emitter class AB power amplifiers for military and professional applications at frequencies from 1.6 to 1.85 GHz, in CW conditions.