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LLDB6中文资料
LLDB6数据手册规格书PDF详情
Features
● The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within four volts with a typical breakover voltage of LLDB3 32 V, LLDB4 40 V. These diacs are intended for use in thyristor phase control, circuits for lamp-dimming, universal-motor speed controls, and heat controls.
LLDB6产品属性
- 类型
描述
- 型号
LLDB6
- 制造商
JINANJINGHENG
- 制造商全称
Jinan Jingheng(Group) Co.,Ltd
- 功能描述
SILICON BIDIRECTIONAL DIAC
LLDB6 资料下载更多...
LLDB6 芯片相关型号
- 0765305040
- 1N5393
- 63CTQ100
- 80-M2072PA200SC-K705F40
- BU97981MUV-E2
- HMIB001BZ5H5
- HMIB005BX5H3
- HMIB005BZ6H5
- HMIB005UX6H5
- HMIM250UZ5H3
- KSM-914TC5E
- MC74HC4067ADWR2G
- MC74HCT245ADWR2G
- MC74HCT4851A
- MC74LVXC3245
- MUR405-DO27
- PCA9655EMTTXG
- RM60060-2MW14
- RS20FGN
- RS63PH
- SPH50SP2240SNG
- SPOD150SR
- SPODU150MTR2
- SPODU270M
- SPODU320ST
- SPODU420SR2
- SS-5-3.15A
- STM8AF528A
- STM8AF52A9
- TL431ZAS
SUNMATE相关芯片制造商
Datasheet数据表PDF页码索引
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