Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical

structure, these devices exhibit low on-resistance

and optimized switching characteristics,

rendering them suitable for the most demanding

high efficiency converters

Features

• Extremely low gate charge

• Excellent output capacitance (COSS) profile

• 100 avalanche tested

• Zener-protected

Applications

• Switching applications