Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical

structure, the devices exhibit low on-resistance

and optimized switching characteristics, rendering

them suitable for the most demanding high

efficiency converters.

Features

• Extremely low gate charge

• Excellent output capacitance (Coss) profile

• 100 avalanche tested

• Zener-protected

Applications

• Switching applications