Features

 Very low on-resistance

 Very low gate charge

 High avalanche ruggedness

 Low gate drive power loss

Applications

 Switching applications

 Power tools

Description

This device is an N-channel Power MOSFET

developed using the STripFET™ F6 technology

with a new trench gate structure. The resulting

Power MOSFET exhibits very low RDS(on) in all

packages.