■ TYPICAL RDS(on) = 0.015

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100 AVALANCHE TESTED

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique Single Feature Size™

strip-based process. The resulting transistor

shows extremely high packing density for low onresistance,

rugged avalanche characteristics and

less critical alignment steps therefore a

remarkable manufacturing reproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SWITCHING SPEED

■ MOTOR CONTROL

■ DC-DC & DC-AC CONVERTERS

■ AUTOMOTIVE