DESCRIPTION

This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™ ” stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.12 Ω

■ EXCEPTIONAL dv/dt CAPABILITY

■ AVALANCHERUGGED TECHNOLOGY

■ 100 AVALANCHE TESTED

■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

■ DC MOTOR CONTROL (DISK DRIVES,etc.)

■ DC-DC & DC-AC CONVERTERS

■ SYNCHRONOUS RECTIFICATION