DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.1 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100 AVALANCHE TESTED

■ AVALANCHE RUGGED TECHNOLOGY

■ LOW THRESHOLD DRIVE

APPLICATIONS

■ DC MOTOR CONTROL (DISK DRIVES, etc.)

■ DC-DC & DC-AC CONVERTERS

■ SYNCHRONOUS RECTIFICATION