Description

This device is a dual N-channel Power MOSFET

which utilizes the latest generation of design rules

for ST's proprietary STripFET™ V and

STripFET™ VI DeepGATE™ technology. The

lowest available RDS(on)* Qg in this chip scale

package renders the device suitable for the most

demanding DC-DC converter applications, where

high power density is required.

Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ Very low switching gate charge

■ High avalanche ruggedness

■ Low gate drive power losses

Application

■ Switching applications