Description

This device is an N-channel Power MOSFET

developed using STMicroelectronics’ STripFET™

H5 technology. The device has been optimized to

achieve very low on-state resistance, contributing

to a FoM that is among the best in its class.

Features

• Designed for automotive applications and

AEC-Q101 qualified

• Low on-resistance

• High avalanche ruggedness

• Low gate drive power loss

• Wettable flank package

Applications

• Switching applications