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STI57N65M5中文资料
STI57N65M5数据手册规格书PDF详情
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
■ Worldwide best RDS(on)*area amongst the silicon based devices
■ Higher VDSS rating, high dv/dt capability
■ Excellent switching performance
■ Easy to drive, 100 avalanche tested
Applications
■ Switching applications
STI57N65M5产品属性
- 类型
描述
- 型号
STI57N65M5
- 功能描述
MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
24+ |
NA |
3713 |
进口原装正品优势供应 |
|||
ST/意法 |
25+ |
TO-262 |
32360 |
ST/意法全新特价STI57N65M5即刻询购立享优惠#长期有货 |
|||
ST/意法半导体 |
22+ |
TO-262-3 |
6003 |
原装正品现货 可开增值税发票 |
|||
ST |
23+ |
TO-262 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
ST |
18+ |
TO-262 |
85600 |
保证进口原装可开17%增值税发票 |
|||
STM |
25+ |
TO-262 |
326 |
就找我吧!--邀您体验愉快问购元件! |
|||
ST |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
|||
ST/意法 |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
|||
ST/意法半导体 |
24+ |
TO-262-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST/意法半导体 |
21+ |
TO-262-3 |
8860 |
只做原装,质量保证 |
STI57N65M5 价格
参考价格：￥46.8607
STI57N65M5 资料下载更多...
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STMICROELECTRONICS相关芯片制造商
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