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STI21NM60ND中文资料

厂家型号

STI21NM60ND

文件大小

545.74Kbytes

页面数量

18

功能描述

N-channel 600 V, 0.17 廓, 17 A FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

MOSFET N-Ch, 600V-0.17ohms FDMesh 17A

数据手册

下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

STI21NM60ND数据手册规格书PDF详情

Description

The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters.

Features

■ The worldwide best RDS(on)*area amongst the fast recovery diode devices

■ 100 avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Extremely high dv/dt and avalanche capabilities

Application

■ Switching applications

STI21NM60ND产品属性

  • 类型

    描述

  • 型号

    STI21NM60ND

  • 功能描述

    MOSFET N-Ch, 600V-0.17ohms FDMesh 17A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-10-9 14:16:00
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