Features

• Extremely low gate charge

• Excellent output capacitance (COSS) profile

• Very low turn-off switching losses

• 100 avalanche tested

• Zener-protected

Applications

• Switching applications

• Tailored for very high frequency converters (f > 150 kHz)

Description

This device is an N-channel Power MOSFET developed using MDmesh™

M2 enhanced performance (EP) technology. Thanks to its strip layout and an

improved vertical structure, the device exhibits low on-resistance, optimized switching

characteristics with very low turn-off switching losses, rendering it suitable for the

most demanding very high frequency converters.