Description

This ultrafast IGBT is developed using a new

planar technology to yield a device with tighter

switching energy variation (Eoff) versus

temperature. The suffix W denotes a subset of

products designed for high switching frequency

operation (over 100 kHz).

Features

■ Improved Eoff at elevated temperature

■ Low CRES / CIES ratio (no cross-conduction

susceptibility)

■ Low VF soft recovery antiparallel diode

Applications

■ Welding

■ Induction heating

■ Resonant converters