Features

• AEC-Q101 qualified

• Maximum junction temperature: TJ = 175 °C

• Logic level gate drive

• High-speed switching series

• Minimized tail current

• VCE(sat) = 1.6 V (typ.) @ IC = 30 A

• Low VF soft-recovery co-packaged diode

• Tight parameter distribution

• Safer paralleling

• Low thermal resistance

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the new HB series of IGBTs, which represents

an optimum compromise between conduction and switching loss to maximize the

efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)

temperature coefficient and very tight parameter distribution result in safer paralleling

operation.

Applications

• Automotive injection