Features

• AEC-Q101 qualified

• SCIS energy of 320 mJ @ TJ = 25 °C

• Parts are 100 tested in SCIS

• ESD gate-emitter protection

• Gate-collector high voltage clamping

• Logic level gate drive

• Very low saturation voltage

• High pulsed current capability

• Gate and gate-emitter resistor

Description

This application-specific IGBT utilizes the most advanced PowerMESH™ technology

optimized for coil driving in the harsh environment of automotive ignition systems.

These devices show very low on-state voltage and very high SCIS energy capability

over a wide operating temperature range. Moreover, ESD-protected logic level gate

input and an integrated gate resistor means no external protection circuitry is

required.

Applications

• Automotive ignition coil driver circuit