DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.

■ POLYSILICON GATE VOLTAGE DRIVEN

■ LOW THRESHOLD VOLTAGE

■ LOW ON-VOLTAGE DROP

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ HIGH VOLTAGE CLAMPING FEATURE

■ ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL

APPLICATIONS

■ AUTOMOTIVE IGNITION