Features

• 10 μs of short-circuit withstanding time

• Low VCE(sat) = 1.85 V (typ.) @ IC = 15 A

• Positive VCE(sat) temperature coefficient

• Tight parameter distribution

• Maximum junction temperature: TJ = 175 °C

Applications

• Industrial motor control

• Industrial drives

• Solar inverters

• Uninterruptable power supplies (UPS)

• PFC converters

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss

and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.