Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features

■ Fully insulated and low profile package with increased creepage path from pin to heatsink plate

■ 100 avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Applications

■ Switching applications