Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

• Fully insulated and low profile package with increased creepage path from pin to heatsink plate

• Industry’s lowest RDS(on) x area

• Industry’s best figure of merit (FoM)

• Ultra low gate charge

• 100 avalanche tested

• Zener-protected

Applications

• Switching applications