N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 0.12Ω

■ HIGH CURRENT POWER MODULE

■ AVALANCHE RUGGED TECHNOLOGY

■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY

■ EASY TO MOUNT

■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS

■ EXTREMELY LOW Rth (Junction to case)

■ VERY LOW INTERNAL PARASITIC INDUCTANCE

■ ISOLATED PACKAGE UL RECOGNIZED

APPLICATIONS

■ SMPS & UPS

■ MOTOR CONTROL

■ WELDING EQUIPMENT

■ OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS