Description

This STripFET™ V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM).

Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ Very low switching gate charge

■ High avalanche ruggedness

■ Low gate drive power losses

Application

■ Switching applications