DESCRIPTION

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications..

■ TYPICAL RDS(on) = 7.3 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100 AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

APPLICATIONS

■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION

■ WELDING EQUIPMENT