DESCRIPTION

This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.008 Ω

■ OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS

■ LOW THRESHOLD DRIVE

■ LOGIC LEVEL GATE DRIVE

APPLICATIONS

■ LOW VOLTAGE DC-DC CONVERTERS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ HIGH EFFICIENCY SWITCHING CIRCUITS