DESCRIPTION

This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.014 Ω

■ AVALANCHE RUGGED TECHNOLOGY

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ 175 °C OPERATING TEMPERATURE

■ LOW THRESHOLD DRIVE

■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ DC-DC & DC-AC CONVERTERS

■ AUTOMOTIVE ENVIRONMENT