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STB32N65M5中文资料
STB32N65M5数据手册规格书PDF详情
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
■ Worldwide best RDS(on)* area
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100 avalanche tested
Applications
■ Switching applications
STB32N65M5产品属性
- 类型
描述
- 型号
STB32N65M5
- 功能描述
MOSFET POWER MOSFET N-CH 650V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
STMICROELECTRONICS |
24+ |
N/A |
3840 |
原装原装原装 |
|||
ST/意法 |
25+ |
TO-263 |
32000 |
ST/意法全新特价STB32N65M5即刻询购立享优惠#长期有货 |
|||
ST |
23+ |
TO263 |
6996 |
只做原装正品现货 |
|||
ST |
24+ |
TO-263 |
5000 |
原厂授权代理 价格绝对优势 |
|||
ST/意法半导体 |
22+ |
TO-263-3 |
6002 |
原装正品现货 可开增值税发票 |
|||
ST |
24+ |
原厂原封 |
6523 |
进口原装公司百分百现货可出样品 |
|||
stm |
23+ |
NA |
3286 |
专做原装正品,假一罚百! |
|||
ST |
25+ |
D2PAK |
35400 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ST/意法半导体 |
24+ |
TO-263-3 |
20000 |
现货 |
STB32N65M5 价格
参考价格：￥30.2702
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