Features

• AEC-Q101 qualified

• Very low RDS(on) over the entire temperature range

• High speed switching performances

• Very fast and robust intrinsic body diode

• Very high operating junction temperature capability (TJ = 200 °C)

• Source sensing pin for increased efficiency

• Low thermal resistance multi sintering package

• 7.3 mm minimum creepage (including 0.6 mm particles)

• 1020 Vrms PD2

Application

• Main inverter (electric traction)

Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 3rd generation SiC MOSFET technology. The device

features a very low RDS(on) over the entire temperature range combined with low

capacitances and very high switching operations, which improve application

performance in frequency, energy efficiency, system size and weight reduction.