Features

• Very fast and robust intrinsic body diode

• Very low RDS(on) over the entire temperature range

• High speed switching performances

• Source sensing pin for increased efficiency

Applications

• Switching mode power supply

• DC-DC converters

Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 3rd generation SiC MOSFET technology. The device

features a very low RDS(on) over the entire temperature range combined with low

capacitances and very high switching operations, which improve application

performance in frequency, energy efficiency, system size and weight reduction.