Features

• AEC-Q101 qualified

• Very low RDS(on) over the entire temperature range

• High speed switching performances

• Very fast and robust intrinsic body diode

• Source sensing pin for increased efficiency

Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 3rd generation SiC MOSFET technology. The device

features a very low RDS(on) over the entire temperature range combined with

low capacitances and very high switching operations, which improve application

performance in frequency, energy efficiency, system size and weight reduction.

Applications

• Main inverter (electric traction)

• DC/DC converter for EV/HEV

• On board charger (OBC)