Features

• High efficiency and linear gain operations

• Integrated ESD protection

• Internally matched for ease of use

• Large positive and negative gate-source voltage range for improved class C

operation

• Excellent thermal stability, low HCI drift

• In compliance with the European directive 2002/95/EC

Description

The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for

global positioning system, wideband communications and ISM applications in the

frequency range from 0.7 to 4.2 GHz. It can be used in class AB, B or C for all typical

modulation formats.

Applications

• Telecom and wideband communications

• Avionics and radar

• 2.45 GHz industrial