Features

• High efficiency and linear gain operations

• Integrated ESD protection

• Internally matched for ease of use

• Optimized for Doherty applications

• Large positive and negative gate-source voltage range for improved class C

operation

• In compliance with the European Directive 2002/95/EC

Description

The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed

for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with

frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended,

180 degree push-pull or 90 degree hybrid or Doherty with proper external matching

network.

Applications

• Multicarrier base station

• Industrial, scientific and medical